1.5 0.1 4.5 0.1 2.6 0.15 2.1 0.2 1.3 0.2 0.203max 0.2 0.05 5.1 0.2 features mechanical data maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified s2aa s2ba s2da s2ga s2ja s2ka S2MA maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v ma x i mu m rms v o l t a g e v r w s 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v ma x i mu m dc bl o c ki n g v o l t a g e v dc 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v m a x i m um a v e r age f o r w o r d r e c t i f ied c u r r ent v @ t l = 9 0 o c i f ( a v ) a peak f orw ard surge current @ t l = 110c 8.3ms v single half -sine-w ave superimposed on rated v load(jedec method) i f s m a m a x i m um i n s t an t aneous f o r w a r d v ol t age at 2.0a v f v ma x i mu m dc r e v e r s e c u r r e n t @t a = 2 5 o c at rated dc blockjing voltage @t a =125 o c t y pi c al jun c t i on c apa c i t an c e ( n o t e 2) c j pf ja operating junction and storage temperature range t j t stg o c terminals:solder plated, solderable per mil-std- 1111 750, method 2026 surface mount rectifier s do-214a c (sm a ) polarity: color band denotes cathode end w e i g h t : 0 . 0 0 2 o un c e s , 0 . 0 64 g r a m 2.0 i r 50 5 0 2. m e a s u r e d at 1 . 0 m h z a n d a p p li e d r e v e r s e v o l t a g e of 4 . 0 v o l t s 2 0 o c/w typical thermal resitance (note 3) 125 1.15 -55--------+150 5 . 0 3. thermal resistance f rom junction to ambient and junction to lead p.c.b.mounted on 0.27''x0.27''(7.0x7.0mm 2 ) copper pad areas note: 1.reverse recovery time test conditions:i f =0. 5a, i r =1. 0a, i rr =0. 25a 100 35 70 p l a s t i c p a ck a ge h a s u n d e r w r i t e rs l a b or a t o ry 1 1 1 f l a m m a b i l i t y c l a ss i f i c a t i o n 9 4 v - 0 100 for surface mounted applications 50 units s2a a ---s2m a reverse voltage: 50 --- 1000 v current: 2.0 a built-in strain relief,ideal for automated placement c a s e : j e d e c d o - 2 1 4 a c , m o l d e d p l a s t i c o v er 1111 passivated chip h i gh t e m p e r a t u r e s o l d e r i n g : 1 1 1 2 5 0 o c / 10 s e c o n d s at t e r m i n a l s low profile package dimensions in millimeters r 50 m a diode semiconductor korea www.diode.kr
0.4 0.01 0.1 1 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 t j =25 c o puise width=300 s 1%duty cycle 0 20 40 60 80 100 1 10 100 0.01 0.001 0.1 t j =125 c t j =75 c t j =25 c o o o 0 50 re s i s t i v e or i ndu c t i v e load 60hz resistive or inductive load p.c.b.mounted 0.27''x0.27''(7.0x7.0mm) thick copperpand areas 2.0 60 70 80 90 100 110 120 130 140 150 average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes junction capacitance pf fi g. 5-typi cal juncti on capaci tance reverse voltage,volts lead temperature number of cycles at 60hz instantaneous forward voltage,volts s2a a ---s2m a fi g. 3 -- typi cal forward characteri sti cs fi g. 4 -- typi cal reverse characteri sti cs fi g. 1 -- forward derati ng curve fi g. 2 peak forward surge current percent of rated peak reverse voltage, .2 2 1 .1 4 .4 1.0 2 40 10 20 60 100 4 10 20 40 100 f=1mhz t j =25 1.0 0 1 10 20 40 30 50 70 60 80 20 t j = 5 0 ?? 8.3ms single half sine-wave 24 1 0 81 0 0 40 60 80 www.diode.kr diode semiconductor korea
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